@InProceedings{AbramofRapForOkaKaw:2022:ExStEp,
               author = "Abramof, Eduardo and Rappl, Paulo Henrique de Oliveira and 
                         Fornari, Celso Israel and Okazaki, Anderson K. and Kawata, Bianca 
                         Akemi",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universita\̈t 
                         Wu\̈rzburg} and {Centro Nacional de Pesquisa em Energia e 
                         Materiais (CNPEM)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)}",
                title = "Experimental studies on epitaxial films of three-dimensional 
                         (Bi2Te3) and crystalline (Pb1-xSnxTe) topological insulators",
                 year = "2022",
         organization = "Brazilian Workshop on Semiconductor Physics, 20.",
            publisher = "ITA",
              address = "S{\~a}o Jos{\'e} dos Campos",
             abstract = "Bismuth telluride (Bi2Te3) is an archetype of a three-dimensional 
                         topological insulator, which presents topological surface sates 
                         (TSS) with a linear dispersion like in a Dirac cone positioned 
                         between the valence and conduction bands. The Dirac fermions on 
                         the surface are protected against scattering by the time inversion 
                         symmetry [1]. On the other hand, Pb1-xSnxTe is a topological 
                         crystalline insulator, in which the topological nature of the 
                         electronic structure arises from the crystalline symmetry. In this 
                         case, the TSS appear only for samples with Sn compositions where 
                         the band inversion occurs [2]. Details about the molecular beam 
                         epitaxial growth of Bi2Te3 and Pb1-xSnxTe thin films on (111) BaF2 
                         substrates and their structural characterization will be presented 
                         here. Angle resolved photoemission spectroscopy (ARPES) revealed 
                         metallic surface states in the form of a Dirac cone within the 
                         energy gap of the Bi2Te3 films with the Fermi level crossing only 
                         the TSS, demonstrating a bulk insulating behavior [3]. We will 
                         also show results on the investigation of our Bi2Te3 epitaxial 
                         films doped with europium [4]. Experiments on the electronic 
                         transport of our Pb1-xSnxTe films at intense magnetic fields up to 
                         30 T and temperatures varying from 4.2 to 300 K will be presented 
                         in detail. Pronounced Shubnikov - de Haas oscillations were 
                         detected on SnTe film up to 80 K. Our analysis showed that the 
                         observed beating pattern on these quantum oscillations originates 
                         from the Rashba splitting of the bulk longitudinal ellipsoid in 
                         SnTe [5]. Preliminary results on extrinsic n-type doping of 
                         Pb1-xSnxTe with bismuth will be also exhibited here [6].",
  conference-location = "S{\~a}o Jos{\'e} dos Campos",
      conference-year = "12-16 Set. 2022",
             language = "en",
           targetfile = "abramof_experimental.pdf",
        urlaccessdate = "04 maio 2024"
}